报告题目：Defect centers and high pressure physics: a combination leading to new quantum technologies

报告人：杨森，香港科技大学

报告时间：2023年8月28日10:00

报告地点：中心校区唐敖庆楼B521报告厅

报告摘要

　　Recently, defect centers in wide band gap semiconductor emerge as new physical systems in quantum technologies. One of their unique features is being able to integrate into high pressure instrumentations and making quantum sensing possible in those extreme conditions. In this talk, we will give an overview in the field and present our recent works on using nitrogen vacancy centers in diamond on quantum sensing under high pressure, as well as works of using high pressure to tune the properties of NV centers.

报告人简介

　　Sen Yang is an associate professor in the department of physics, the Hong Kong University of Science and Technology. He got his B.S. from Tsinghua University and Ph.D. in University of California, San Diego. He had worked in University of Stuttgart in Germany. His research focuses on quantum optics and quantum information science in solid state systems. His group has done several breakthrough works which published in Science and Nature sub journals, includes: the first direct proof of Bose Einstein condensation in 2D semiconductor; the quantum storage of single photon states into single nuclear spin which demonstrate the longest storage time optical quantum memory for quantum communications; first demonstration of quantum sensing with NV center in high pressure physics, etc..

举办单位：

吉林大学物理学院

物质模拟方法与软件教育部重点实验室